Numerical method for thermal donors formation simulation during silicon Czochralski growth

Various upgrades of the Czochralski (Cz) growth process are currently being investigated in order to increase throughput and reduce production cost high efficiency silicon-based solar cells. However, as-grown thermal donors (TD) Cz silicon can significantly conversion such An accurate simulation tool is therefore required investigate optimize TD formation during crystal growth. A numerical method combining thermo-hydraulic simulations a kinetic model was improved by implementation more appropriate model, identified through benchmark different models available literature. Three processes were both numerically experimentally. Numerical results remarkable agreement with concentrations measured along three ingots OxyMap technique developed at CEA. The then used detect when formed processes. reliability also assessed sensitivity analyses, highlighting critical importance input interstitial oxygen concentration. These show that estimates axial concentration profiles be obtained so for very processes, supporting robustness its relevance optimization furnace design concentrations.